FDMS8662

FDMS8662 Datasheet


FDMS8662 N-Channel MOSFET

Part Datasheet
FDMS8662 FDMS8662 FDMS8662 (pdf)
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FDMS8662 N-Channel MOSFET

May 2009

FDMS8662 tm

N-Channel
30V, 49A, 2.0m:
- Max rDS on = 2.0m at VGS = 10V, ID = 28A - Max rDS on = 3.0m at VGS = 4.5V, ID = 24A - Advanced Package and Silicon combination
for low rDS on and high efficiency
- MSL1 robust package design - RoHS Compliant

The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance.
- Low Side for Synchronous Buck to Power Core Processor
- Secondary Side Synchronous Rectifier
- Low Side Switch in POL DC/DC Converter
- Oring FET/ Load Switch

Bottom

Pin 1 S

D5 D6

Power 56

D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 30 ±20 49 159 28 200 726 83
-55 to +150

Units V
mJ W °C

RTJC RTJA
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMS8662

Device FDMS8662

Package Power 56

Reel Size 13’’

Tape Width 12mm

Quantity 3000units
2009 Fairchild Semiconductor Corporation

FDMS8662 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS 'BVDSS IDSS IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250PA, VGS = 0V

ID = 250PA, referenced to 25°C
mV/°C

VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250PA

ID = 250PA, referenced to 25°C
mV/°C

VGS = 10V, ID = 28A VGS = 4.5V, ID = 24A VGS = 10V, ID = 28A, TJ = 125°C VDD = 10V, ID = 28A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
4825 6420 pF
2365 3145 pF

Switching Characteristics
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Datasheet ID: FDMS8662 514222