FDMS8660S
FDMS8660S Datasheet
FDMS8660S N-Channel SyncFETTM
| Part | Datasheet |
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FDMS8660S |
FDMS8660S (pdf) |
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| FDMS8660S N-Channel SyncFETTM June 2008 FDMS8660S N-Channel SyncFETTM 30V, 40A, - Max rDS on = at VGS = 10V, ID = 25A - Max rDS on = at VGS = 4.5V, ID = 21A - Advanced Package and Silicon combination for low rDS on and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - RoHS Compliant The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Telecom secondary side rectification Pin 1 S Power 56 Bottom view D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Note 1a Note 3 Note 1a Thermal Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Device Marking FDMS8660S Device FDMS8660S Package Power 56 Reel Size 13’’ 2008 Fairchild Semiconductor Corporation Ratings 30 ±20 40 147 25 200 937 83 -55 to +150 Units V mJ W °C °C/W Tape Width 12mm Quantity 3000 units FDMS8660S N-Channel SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25°C VGS = 10V, ID = 25A VGS = 4.5V, ID = 21A VGS = 10V, ID = 25A ,TJ = 125°C VDS = 10V, ID = 25A mV/°C Dynamic Characteristics |
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