FDMS3604AS

FDMS3604AS Datasheet

FDMS3604AS Power Stage

Part	Datasheet
FDMS3604AS	FDMS3604AS (pdf)

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Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS3604AS Power Stage FDMS3604AS Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Q1 N-Channel - Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A - Max rDS on = 11 mΩ at VGS = V, ID = 11 A Q2 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 23 A - Max rDS on = mΩ at VGS = V, ID = 21 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFET Q2 have been designed to provide optimal power efficiency. - Computing - Communications - General Purpose Point of Load - Notebook VCORE - Sever G1 D1 PHASE S1/D2 G2S2 S2 Power 56 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Package Marking and Ordering Information S2 5 S2 6 S2 7 G2 8 PHASE 3 D1 2 D1 Note 3 TC = 25 °C TC = 25 °C TA = 25 °C TA = 25 °C TA = 25 °C ±20 ±20 60 131a 130 231b 40 404 2.21a 1.01c 100 1125 2.51b 1.01d -55 to +150 Units V mJ W °C 571a 1251c 501b 1201d °C/W Device Marking 22CA N7CC Device FDMS3604AS Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units FDMS3604AS Power Stage Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Type Min Typ Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 30 Q2 30 Breakdown Voltage Temperature ID = 250 uA, referenced to 25 °C Q1 Coefficient ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

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Is Now Part of

To learn more about ON Semiconductor, please visit our website at

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FDMS3604AS Power Stage

FDMS3604AS

Power Stage

September 2011
30 V Asymmetric Dual N-Channel MOSFET

Q1 N-Channel - Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A - Max rDS on = 11 mΩ at VGS = V, ID = 11 A

Q2 N-Channel - Max rDS on = mΩ at VGS = 10 V, ID = 23 A - Max rDS on = mΩ at VGS = V, ID = 21 A - Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET Q1 and synchronous SyncFET Q2 have been designed to provide optimal power efficiency.
- Computing
- Communications
- General Purpose Point of Load
- Notebook VCORE
- Sever

G1 D1

PHASE S1/D2

G2S2 S2

Power 56

Bottom

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited
-Continuous Silicon limited -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Package Marking and Ordering Information

S2 5 S2 6 S2 7 G2 8

PHASE
3 D1 2 D1

Note 3 TC = 25 °C TC = 25 °C TA = 25 °C

TA = 25 °C TA = 25 °C
±20
±20
60 131a
130 231b
40 404 2.21a 1.01c
100 1125 2.51b 1.01d
-55 to +150

Units V
mJ W °C
571a 1251c
501b 1201d
°C/W

Device Marking 22CA N7CC

Device FDMS3604AS

Package Power 56

Reel Size 13 ”

Tape Width 12 mm

Quantity 3000 units

FDMS3604AS Power Stage

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Type Min Typ

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 uA, VGS = 0 V ID = 1 mA, VGS = 0 V

Q1 30 Q2 30

Breakdown Voltage Temperature

ID = 250 uA, referenced to 25 °C Q1

Coefficient

ID = 10 mA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

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Datasheet ID: FDMS3604AS 514218