FDMS0308CS

FDMS0308CS Datasheet

FDMS0308CS N-Channel SyncFETTM

Part	Datasheet
FDMS0308CS	FDMS0308CS (pdf)

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FDMS0308CS N-Channel SyncFETTM August 2010 FDMS0308CS N-Channel SyncFETTM 30 V, 42 A, 3 m: - Max rDS on = m at VGS = 10 V, ID = 21 A - Max rDS on = m at VGS = V, ID = 17 A - Advanced Package and Silicon combination for low rDS on and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - RoHS Compliant The FDMS0308CS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Desktop Bottom Pin 1 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 4 Note 1a Note 3 Note 1a Ratings 30 ±20 42 113 22 150 98 65 -55 to +150 Units V mJ W °C RTJC RTJA Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS0308CS Device FDMS0308CS Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units 2010 Fairchild Semiconductor Corporation FDMS0308CS N-Channel SyncFETTM Electrical Characteristics TA = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V mV/°C On Characteristics Note 2 VGS th 'VGS th 'TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on to Source On Resistance Forward Transconductance VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 °C mV/°C VGS = 10 V, ID = 21 A VGS = V, ID = 17 A VGS = 10 V, ID = 21 A, TJ = 125 °C VDS = 5 V, ID = 21 A Dynamic Characteristics

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FDMS0308CS N-Channel SyncFETTM

August 2010

FDMS0308CS

N-Channel SyncFETTM
30 V, 42 A, 3 m:
- Max rDS on = m at VGS = 10 V, ID = 21 A - Max rDS on = m at VGS = V, ID = 17 A - Advanced Package and Silicon combination for low rDS on
and high efficiency
- SyncFET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - RoHS Compliant

The FDMS0308CS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU low side switch
- Networking Point of Load low side switch
- Desktop

Bottom

Pin 1

Power 56

D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 4

Note 1a Note 3

Note 1a

Ratings 30 ±20 42 113 22 150 98 65
-55 to +150

Units V
mJ W °C

RTJC RTJA
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMS0308CS

Device FDMS0308CS

Package Power 56

Reel Size 13 ’’

Tape Width 12 mm

Quantity 3000 units
2010 Fairchild Semiconductor Corporation

FDMS0308CS N-Channel SyncFETTM

Electrical Characteristics TA = 25 °C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 1 mA, VGS = 0 V
'BVDSS 'TJ

Breakdown Voltage Temperature Coefficient

ID = 10 mA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

IGSS

Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
mV/°C

On Characteristics Note 2

VGS th
'VGS th 'TJ

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on
to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 1 mA

ID = 10 mA, referenced to 25 °C
mV/°C

VGS = 10 V, ID = 21 A VGS = V, ID = 17 A VGS = 10 V, ID = 21 A, TJ = 125 °C VDS = 5 V, ID = 21 A

Dynamic Characteristics

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Datasheet ID: FDMS0308CS 514211