FDMJ1028N
FDMJ1028N Datasheet
FDMJ1028N N-Channel 2.5V Specified MOSFET
| Part | Datasheet |
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FDMJ1028N |
FDMJ1028N (pdf) |
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| FDMJ1028N N-Channel 2.5V Specified MOSFET June 2006 FDMJ1028N N-Channel 2.5V Specified MOSFET tm 20V, 3.2A, - Max rDS on = at VGS = 4.5V - Max rDS on = at VGS = 2.5V - Low gate charge - High performance trench technology for extremely low rDS on - RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. The rDS on and thermal properties of the device are optimized for battery power management applications. - Battery management - Baseband Switches Bottom Drain Contact Bottom Drain Contact MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance , Junction to Ambient Note 1a Package Marking and Ordering Information Device Marking 028 Device FDMJ1028N Reel Size 7’’ Tape Width 8mm Ratings 20 ±12 -55 to +150 Units V A W °C °C/W Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDMJ1028N N-Channel 2.5V Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 16, VGS = 0V VGS = ±12V, VDS = 0V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 4.5V, ID = 3.2A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 3.2A, TJ =125oC VGS = 5V, ID = 3.2A mV/°C 89 132 Dynamic Characteristics Ciss Coss Crss RG VDS =10V, VGS = 0V, f = 1MHz f = 1MHz |
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