FDMC3300NZA

FDMC3300NZA Datasheet

FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET

Part	Datasheet
FDMC3300NZA	FDMC3300NZA (pdf)

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FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET January 2007 FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET tm 20V, 8A, 26mΩ - Max rDS on = 26mΩ at VGS = 4.5V, ID = 8.0A - Max rDS on = 34mΩ at VGS = 2.5V, ID = 7.0A - >2000V ESD protection - Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced process to optimize the rDS on VGS = 2.5V on special MLP lead frame with all the drains on one side of the package. - RoHS Compliant Application - Li-lon Battery Pack DD22 D2 D1 Power 33 G2 S2 G1 S1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Steady State Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Rating 20 ±12 8 40 -55 to +150 Units V W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking 3300A Device FDMC3300NZA Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V ID = 250uA, referenced to 25°C VDS = 16V, VGS = 0V VGS = ±12V, VDS= 0V mV/°C ±10 On Characteristics VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250uA Gate to Source Threshold Voltage Temperature Coefficient ID = 250uA, referenced to 25°C mV/°C VGS = 4.5V, ID = 8.0A rDS on Drain to Source On Resistance VGS = 2.5V, ID = 7.0A VGS = 4.5V, ID = 8.0A, TJ = 150°C Forward Transconductance VDS = 5V, ID = 8.0A Dynamic Characteristics

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FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET

January 2007

FDMC3300NZA

Monolithic Common Drain N-Channel 2.5V Specified MOSFET tm
20V, 8A, 26mΩ
- Max rDS on = 26mΩ at VGS = 4.5V, ID = 8.0A - Max rDS on = 34mΩ at VGS = 2.5V, ID = 7.0A - >2000V ESD protection
- Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced process to
optimize the rDS on VGS = 2.5V on special MLP lead frame with all the drains on one side of the package.
- RoHS Compliant

Application
- Li-lon Battery Pack

DD22 D2 D1

Power 33

G2 S2 G1 S1

D2 5 D2 6 D1 7 D1 8
4 G2 3 S2 2 G1 1 S1

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Steady State Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 1a

Rating 20 ±12 8 40
-55 to +150

Units V

W °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b
°C/W

Device Marking 3300A

Device FDMC3300NZA

Package Power 33

Reel Size 7”

Tape Width 8mm

Quantity 3000 units
2006 Fairchild Semiconductor Corporation

FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Max Units

Off Characteristics

BVDSS

IDSS IGSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250uA, VGS = 0V

ID = 250uA, referenced to 25°C

VDS = 16V, VGS = 0V VGS = ±12V, VDS= 0V
mV/°C
±10

On Characteristics

VGS th

Gate to Source Threshold Voltage

VGS = VDS, ID = 250uA

Gate to Source Threshold Voltage Temperature Coefficient

ID = 250uA, referenced to 25°C
mV/°C

VGS = 4.5V, ID = 8.0A
rDS on

Drain to Source On Resistance

VGS = 2.5V, ID = 7.0A

VGS = 4.5V, ID = 8.0A, TJ = 150°C

Forward Transconductance

VDS = 5V, ID = 8.0A

Dynamic Characteristics

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Datasheet ID: FDMC3300NZA 514198