FDMA0104

FDMA0104 Datasheet

FDMA0104 Single N-Channel V Specified MOSFET

Part	Datasheet
FDMA0104	FDMA0104 (pdf)

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FDMA0104 Single N-Channel V Specified MOSFET FDMA0104 May 2011 Single N-Channel V Specified MOSFET 20 V, A, mΩ - Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm - RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power process to optimize the rDS ON VGS = V on special MicroFET leadframe. - Li-lon Battery Pack - DC-DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact DD S MicroFET 2X2 Bottom View MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings 20 ±8 54 -55 to +150 Units V A W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking 104 Device FDMA0104 Package MicroFET 2X2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units 2011 Fairchild Semiconductor Corporation FDMA0104 Single N-Channel V Specified MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 uA, VGS = 0 V ID = 250 uA, referenced to 25 °C VDS = 16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA ID = 250 uA, referenced to 25 °C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ = 125 °C VDD = 5 V, ID = A Dynamic Characteristics Ciss Coss Crss Rg VDS = 10 V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 10 V, ID = A, VGS = V, RGEN = 6 Ω

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FDMA0104 Single N-Channel V Specified MOSFET

FDMA0104

May 2011

Single N-Channel V Specified MOSFET
20 V, A, mΩ
- Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Max rDS on = mΩ at VGS = V, ID = A - Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
- RoHS Compliant

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power process to optimize the rDS ON VGS = V on special MicroFET leadframe.
- Li-lon Battery Pack
- DC-DC Buck Converters

Pin 1 Drain

DD G Source

Bottom Drain Contact

DD S MicroFET 2X2 Bottom View

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage
-Continuous -Pulsed

TA = 25 °C

Power Dissipation

TA = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings 20 ±8 54
-55 to +150

Units V A

W °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b
°C/W

Device Marking 104

Device FDMA0104

Package MicroFET 2X2

Reel Size 7 ’’

Tape Width 12 mm

Quantity 3000 units
2011 Fairchild Semiconductor Corporation

FDMA0104 Single N-Channel V Specified MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250 uA, VGS = 0 V

ID = 250 uA, referenced to 25 °C

VDS = 16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 uA

ID = 250 uA, referenced to 25 °C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ = 125 °C VDD = 5 V, ID = A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 10 V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf

Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge

VDD = 10 V, ID = A, VGS = V, RGEN = 6 Ω

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Datasheet ID: FDMA0104 514194