FDJ127P
FDJ127P Datasheet
FDJ127P
| Part | Datasheet |
|---|---|
FDJ127P |
FDJ127P (pdf) |
| PDF Datasheet Preview |
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| FDJ127P July 2004 FDJ127P P-Channel Vgs Specified MOSFET This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • Battery management • Load switch • A, V. RDS ON = 60 VGS = V RDS ON = 85 VGS = V RDS ON = 133 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • Compact industry standard SC75-6 surface mount package SC75-6 FLMP Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 PD TJ, TSTG Power Dissipation Note 1 Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1 Ratings ±8 to +150 Units W °C °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDJ127P 7’’ Tape width 8mm Quantity 3000 units Fairchild Semiconductor Corporation FDJ127P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA,Referenced to 25°C VDS = V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA ID = µA,Referenced to 25°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A |
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