FDJ1027P P-Channel 1.8V MOSFET
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FDJ1027P P-Channel 1.8V MOSFET August 2006 FDJ1027P P-Channel 1.8V MOSFET • A, V RDS ON = 160 VGS = V RDS ON = 230 VGS = V RDS ON = 390 VGS = V • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely low RDS ON • FLMP SC75 package Enhanced thermal performance in industry-standard package size • Battery management/Charger Application • Load switch This dual P-Channel 1.8V MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 G2 S2 S1 Bottom Drain Contact MOSFET Maximum Ratings TA=25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information FDJ1027P Ratings ±8 to +150 Units V A W °C °C/W 3000 units 2005 Fairchild Semiconductor Corporation FDJ1027P P-Channel 1.8V MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BV DSS Breakdown Voltage Breakdown Voltage Temperature IDSS Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 2 VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±8 V, VDS = 0 V VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Static Forward Transconductance Dynamic Characteristics VDS = VGS, ID = µA ID = µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ = 125°C VDS = V, ID = A Ciss Coss Crss Rg VDS = V, VGS = 0 V, f = MHz f = MHz Switching Characteristics Note 2 td on tr Delay Time Rise Time VDD = V, ID = A, VGS = V, RGEN = 6 td off Delay Time |
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