FDI3652

FDI3652 Datasheet


FDB3652 / FDP3652 / FDI3652

Part Datasheet
FDI3652 FDI3652 FDI3652 (pdf)
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FDB3652 / FDP3652 / FDI3652

October 2003

FDB3652 / FDP3652 / FDI3652

N-Channel MOSFET 100V, 61A,
• rDS ON = Typ. , VGS = 10V, ID = 61A
• Qg tot = 41nC Typ. , VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101

Formerly developmental type 82769
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems

GATE

DRAIN FLANGE

SOURCE

TO-263AB

FDB SERIES

DRAIN FLANGE

SOURCE DRAIN GATE

TO-220AB

FDP SERIES

DRAIN FLANGE

SOURCE DRAIN GATE

TO-262AA

FDI SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V with = 43oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Ratings 100 ±20
61 43 9 Figure 4 182 150 -55 to 175

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-263, TO-262

Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 Note 2

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

Units V

A mJ W/oC
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
Package Marking and Ordering Information

Device Marking FDB3652 FDP3652 FDI3652

Device FDB3652 FDP3652 FDI3652

Package TO-263AB TO-220AB TO-262AA

Reel Size 330mm Tube

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 80V VGS = 0V

TC= 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 61A, VGS = 10V ID = 30A, VGS = 6V ID = 61A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 2V

VDD = 50V ID = 61A Ig = 1.0mA

Switching Characteristics VGS = 10V

Turn-On Time
td ON tr

Turn-On Delay Time Rise Time
td OFF tf

Turn-Off Delay Time Fall Time
tOFF

Turn-Off Time

VDD = 50V, ID = 61A VGS = 10V, RGS =

Drain-Source Diode Characteristics
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Datasheet ID: FDI3652 514180