FDI025N06
FDI025N06 Datasheet
FDI025N06 N-Channel MOSFET
| Part | Datasheet |
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FDI025N06 |
FDI025N06 (pdf) |
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| FDI025N06 N-Channel MOSFET June 2008 FDI025N06 N-Channel MOSFET 60V, 265A, • RDS on = Typ. VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS on • High power and current handling capability • RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC convertors / Synchronous Rectification TO-262 FDI Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted Parameter Ratings VDSS VGSS IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC Note 1 Note 2 Note 3 60 ±20 265* 190* 1060 2531 395 TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings Units V A mJ V/ns W W/oC Units oC/W 2008 Fairchild Semiconductor Corporation FDI025N06 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDI025N06 Device FDI025N06 Package TO-262 Reel Size - Tape Width - Quantity 50 Electrical Characteristics Parameter Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current Test Conditions Min. ID = 250µA, VGS = 0V, TC= 25oC ID = 250µA, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 75A VDS = 10V, ID = 75A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = Note 4, 5 Drain-Source Diode Characteristics |
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