FDFS2P103A

FDFS2P103A Datasheet

FDFS2P103A

Part	Datasheet
FDFS2P103A	FDFS2P103A (pdf)

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FDFS2P103A August 2002 FDFS2P103A Integrated P-Channel MOSFET and Schottky Diode The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • A, RDS ON = 59 VGS = V RDS ON = 92 VGS = V • VF < V 1 A TJ = 125°C VF < V 1 A TJ = 25°C • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility SO-8 Pin 1 A1 A2 S3 G4 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Average Forward Current Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDFS2P103A FDFS2P103A 13’’ Ratings ±25 to +150 Tape width 12mm 8C 7C 6D 5D Units °C V A Quantity 2500 units Fairchild Semiconductor Corporation FDFS2P103A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coefficient ID = µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSS Leakage VGS = ±25 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS,

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FDFS2P103A

August 2002

FDFS2P103A

Integrated P-Channel MOSFET and Schottky Diode

The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
• A, RDS ON = 59 VGS = V RDS ON = 92 VGS = V
• VF < V 1 A TJ = 125°C VF < V 1 A TJ = 25°C
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

SO-8

Pin 1

A1 A2 S3 G4

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Note 1a Note 1a

Note 1b

Note 1c

TJ, TSTG VRRM IO

Operating and Storage Junction Temperature Range

Schottky Average Forward Current

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDFS2P103A

FDFS2P103A
13’’

Ratings ±25
to +150

Tape width 12mm
8C 7C 6D 5D

Units
°C V A

Quantity 2500 units

Fairchild Semiconductor Corporation

FDFS2P103A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = µA

Breakdown Voltage Temperature Coefficient

ID = µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = V, VGS = 0 V

IGSS

Leakage

VGS = ±25 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance

VDS = VGS,

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Datasheet ID: FDFS2P103A 514162