FDFS2P103
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FDFS2P103 (pdf) |
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FDFS2P103 September 2001 FDFS2P103 Integrated P-Channel MOSFET and Schottky Diode The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • A, RDS ON = 59 VGS = V RDS ON = 92 VGS = V • VF < V 1 A TJ = 125°C VF < V 1 A TJ = 25°C • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility SO-8 Pin 1 A1 A2 S3 G4 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Average Forward Current Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDFS2P103 FDFS2P103 13’’ Ratings ±25 to +150 Tape width 12mm 8C 7C 6D 5D Units °C V A Quantity 2500 units Fairchild Semiconductor Corporation FDFS2P103 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA,Referenced to 25°C VDS = V, VGS = 25 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static |
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