FDFS2P102
FDFS2P102 Datasheet
FDFS2P102
| Part | Datasheet |
|---|---|
FDFS2P102 |
FDFS2P102 (pdf) |
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| FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • DC/DC converters • Load Switch • Motor Drives • A, V. RDS ON = VGS = V RDS ON = VGS = V. • VF < V 1 A TJ = 125 oC . VF < V 1 A. VF < V 2 A. • Schottky and MOSFET incorporated into single power surface mount SO-8 package. • Electrically independent Schottky and MOSFET pinout for design flexibility. Pin 1 A1 A2 S3 G4 MOSFET Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Operating and Storage Temperature Range Note 1a Note 1a Note 1b Note 1c Ratings -20 ±20 -20 2 1 -55 to +150 Schottky Diode Maximum Ratings TA=25oC unless otherwise noted VRRM Average Forward Current Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDFS2P102 FDFS2P102 Tape Width 12mm Fairchild Semiconductor International 8C 7C 6D 5D Units Quantity 2500 units FDFS2P102 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = -250 µA VDS = - 16 V, VGS = 0 V TJ = 55°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 100 nA -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = A VGS = V, ID = A VGS = -10 V, VDS = -5 V VDS = -10 V, ID = A -1 -2 |
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