FDFMA2P853T
FDFMA2P853T Datasheet
FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode
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FDFMA2P853T |
FDFMA2P853T (pdf) |
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| FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode December 2008 FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode tm V, A, 120 Features MOSFET: - Max rDS on = 120 at VGS = V, ID = A - Max rDS on = 160 at VGS = V, ID = A - Max rDS on = 240 at VGS = V, ID = A Schottky: - VF < V 500 mA This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. - Low profile - mm maximum - in the new package MicroFET 2x2 Thin - RoHS Compliant - Free from halogenated compounds and antimony oxides Pin 1 A NC D MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous TA = 25 °C -Pulsed Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Schottky Average Forward Current Thermal Characteristics Note 1a Note 1a Note 1b Ratings ±8 to +150 30 1 Units V °C V A Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b Note 1c Note 1d °C/W Device Marking 53 Device FDFMA2P853T Package MicroFET 2x2 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units 2008 Fairchild Semiconductor Corporation FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = µA, VGS = 0 V ID = µA, referenced to 25 °C VDS = V, VGS = 0 V VGS = ±8 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = µA ID = µA, referenced to 25 °C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A TJ = 125 °C VDS = V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg TOT Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = V, ID = A VGS = V, RGEN = 6 |
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