FDFMA2P853T

FDFMA2P853T Datasheet


FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode

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FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode

December 2008

FDFMA2P853T

Integrated P-Channel MOSFET and Schottky Diode tm

V, A, 120 Features

MOSFET:
- Max rDS on = 120 at VGS = V, ID = A - Max rDS on = 160 at VGS = V, ID = A - Max rDS on = 240 at VGS = V, ID = A

Schottky:
- VF < V 500 mA

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
- Low profile - mm maximum - in the new package MicroFET 2x2 Thin
- RoHS Compliant
- Free from halogenated compounds and antimony oxides

Pin 1 A NC D

MicroFET 2X2 Thin

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS

TJ, TSTG VRRM IO

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous TA = 25 °C -Pulsed

Power Dissipation

TA = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Schottky Average Forward Current

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings ±8
to +150 30 1

Units V
°C V A

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b

Note 1c

Note 1d
°C/W

Device Marking 53

Device FDFMA2P853T

Package MicroFET 2x2 Thin

Reel Size 7 ’’

Tape Width 8 mm

Quantity 3000 units
2008 Fairchild Semiconductor Corporation

FDFMA2P853T Integrated P-Channel MOSFET and Schottky Diode

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = µA, VGS = 0 V ID = µA, referenced to 25 °C

VDS = V, VGS = 0 V VGS = ±8 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = µA

ID = µA, referenced to 25 °C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A TJ = 125 °C VDS = V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = V, VGS = 0 V, f = MHz

Switching Characteristics
td on tr td off tf Qg TOT Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge

VDD = V, ID = A VGS = V, RGEN = 6
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Datasheet ID: FDFMA2P853T 514153