FDD8750

FDD8750 Datasheet


FDD8750 N-Channel MOSFET

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FDD8750 FDD8750 FDD8750 (pdf)
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FDD8750 N-Channel MOSFET

December 2006

FDD8750

N-Channel MOSFET
25V, 2.7A,
- Max rDS on = at VGS = 10V, ID = 2.7A - Max rDS on = at VGS = 4.5V, ID = 2.7A - Low gate charge Qg 10 = 6nC Typ - Low gate resistance - Avalanche rated and 100% tested - RoHS Compliant

This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS on and fast switching speed.

Application
- Low current DC-DC switching - Linear regulation

DT O- P-2A5K2

T O -25 2

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package Limited -Continuous Silicon Limited -Continuous -Pulsed

TC= 25°C TC= 25°C TA= 25°C

Drain-Source Avalanche Energy

Power Dissipation Power Dissipation

TC= 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1 Note 1a

Note 3

Note 1a

Ratings 25 ±20 16 14 19 18
to +175

Units V
mJ W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDD8750

Device FDD8750

Package D-PAK TO-252

Reel Size 13’’

Tape Width 12mm

Quantity 2500 units
2006 Fairchild Semiconductor Corporation

FDD8750 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

ID = 250µA, referenced to 25°C
mV/°C

VDS =20V, VGS = 0V TJ=150°C

VGS = ±20V, VGS = 0V
1 µA
250 ±100 nA

On Characteristics Note 2

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

VGS = VDS, ID = 250µA

ID = 250µA, referenced to 25°C
mV/°C

VGS = 10V, ID = 2.7A VGS = 4.5V, ID = 2.7A VGS = 10V, ID = 2.7A, TJ=150°C

Dynamic Characteristics
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Datasheet ID: FDD8750 514144