FDD8750
FDD8750 Datasheet
FDD8750 N-Channel MOSFET
| Part | Datasheet |
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FDD8750 |
FDD8750 (pdf) |
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| FDD8750 N-Channel MOSFET December 2006 FDD8750 N-Channel MOSFET 25V, 2.7A, - Max rDS on = at VGS = 10V, ID = 2.7A - Max rDS on = at VGS = 4.5V, ID = 2.7A - Low gate charge Qg 10 = 6nC Typ - Low gate resistance - Avalanche rated and 100% tested - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS on and fast switching speed. Application - Low current DC-DC switching - Linear regulation DT O- P-2A5K2 T O -25 2 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package Limited -Continuous Silicon Limited -Continuous -Pulsed TC= 25°C TC= 25°C TA= 25°C Drain-Source Avalanche Energy Power Dissipation Power Dissipation TC= 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1 Note 1a Note 3 Note 1a Ratings 25 ±20 16 14 19 18 to +175 Units V mJ W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDD8750 Device FDD8750 Package D-PAK TO-252 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDD8750 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C mV/°C VDS =20V, VGS = 0V TJ=150°C VGS = ±20V, VGS = 0V 1 µA 250 ±100 nA On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C mV/°C VGS = 10V, ID = 2.7A VGS = 4.5V, ID = 2.7A VGS = 10V, ID = 2.7A, TJ=150°C Dynamic Characteristics |
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