FDD8444L
FDD8444L Datasheet
FDD8444L N-Channel MOSFET
| Part | Datasheet |
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FDD8444L |
FDD8444L (pdf) |
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| FDD8444L N-Channel MOSFET MPLEMENTATION April 2007 FDD8444L N-Channel MOSFET 40V, 50A, 6.0mΩ - Typ rDS on = 3.8mΩ at VGS = 5V, ID = 50A - Typ Qg tot = 46nC at VGS = 5V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse/ Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Transmission - Distributed Power Architecture and VRMs - Primary Switch for 12V and 24V systems AD FREE I 2006 Fairchild Semiconductor Corporation FDD8444L N-Channel MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 150°C, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Note 1 Note 2 Ratings 40 ±20 50 16 See Figure 4 295 153 -55 to +175 Units V mJ W/oC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area Package Marking and Ordering Information oC/W oC/W Device Marking FDD8444L Device FDD8444L Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics Min Typ Max Units BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V VDS = 32V, VGS = 0V TJ = 150oC VGS = ±20V On Characteristics ±100 nA VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 50A, VGS= 10V ID = 50A, VGS= 5V ID = 50A, VGS= 4.5V ID = 50A, VGS= 5V, TJ = 175oC Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1MHz 5530 Gate Resistance f = 1MHz Qg TOT Total Gate Charge at 5V VGS = 0 to 5V Qg TH Threshold Gate Charge VGS = 0 to 2V VDD = 20V Gate to Source Gate Charge ID = 50A Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA Gate to Drain “Miller“ Charge FDD8444L N-Channel MOSFET |
| More datasheets: 74F161ASJ | 74F163ASJX | 74F163ASCX | 74F163ASJ | 74F163APC | ADNK-6010 | 41-40016 | 41-40017 | 41-40015 | 3132 |
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