FDD8426H
FDD8426H Datasheet
FDD8426H Dual N & P-Channel MOSFET
| Part | Datasheet |
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FDD8426H |
FDD8426H (pdf) |
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| FDD8426H Dual N & P-Channel MOSFET FDD8426H September 2009 Dual N & P-Channel MOSFET N-Channel 40 V, 12 A, 12 P-Channel -40 V, -10 A, 17 Q1 N-Channel - Max rDS on = 12 at VGS = 10 V, ID = 12 A - Max rDS on = 15 at VGS = V, ID = 11 A Q2 P-Channel - Max rDS on = 17 at VGS = -10 V, ID = -10 A - Max rDS on = 27 at VGS = V, ID = A - 100% UIL Tested - RoHS Compliant These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. - Inverter - H-Bridge D1/D2 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Package Limited - Continuous Silicon Limited - Continuous - Pulsed Power Dissipation for Single Operation EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range Thermal Characteristics TC = 25°C TA = 25°C TC = 25°C TA = 25°C TA = 25°C Note 1 Note 1a Note 1b Note 3 ±20 ±20 -55 to +150 Units V W mJ °C Thermal Resistance, Junction to Case, Single Operation for Q1 Note 1 Thermal Resistance, Junction to Case, Single Operation for Q2 Note 1 Package Marking and Ordering Information °C/W Device Marking FDD8426H Device FDD8426H Package TO-252-4L Reel Size 13” Tape Width 12mm Quantity 2500units 2009 Fairchild Semiconductor Corporation FDD8426H Dual N & P-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C VDS = 32 V, VGS = 0 V VDS = -32 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Type Min Typ Max Units Q1 40 Q2 -40 Q1 Q2 35 -32 mV/°C Q1 Q2 ±100 nA ±100 nA On Characteristics VGS th rDS on Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = -250 µA Q1 Q2 Gate to Source Threshold Voltage ID = 250 µA, referenced to 25 °C |
| More datasheets: AGQ200-48S1V5-6L | AGQ200-48S1V5-4L | AGQ200-48S1V5PB-4L | 18062USA | 15-006293 | 495040 | 76000934 | 4205-058LF | 4205-058 | 7-406-000-BA |
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