FDD6796

FDD6796 Datasheet

FDD6796 N-Channel MOSFET

Part	Datasheet
FDD6796	FDD6796 (pdf)

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FDD6796 N-Channel MOSFET FDD6796 N-Channel MOSFET 25 V, 40 A, June 2009 - Max rDS on = at VGS = 10 V, ID = 20 A - Max rDS on = at VGS = V, ID = A - 100% UIL tested - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture DTO-P-2A5K2 TO-252 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 25 ±20 40 69 20 100 84 42 -55 to +175 Units V mJ W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDD6796 Device FDD6796 Package D-PAK TO-252 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units 2009 Fairchild Semiconductor Corporation FDD6796 N-Channel MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V , ID = 20 A VGS = V, ID = A VGS = 10 V, ID = 20 A, TJ = 150 °C VDS = 5 V, ID = 20 A Dynamic Characteristics Ciss Coss Crss Rg VDS = 13 V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6 VGS = 0 V to 10 V VGS = 0 V to V VDD = 13 V, ID = 20 A

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FDD6796 N-Channel MOSFET

FDD6796

N-Channel MOSFET
25 V, 40 A,

June 2009
- Max rDS on = at VGS = 10 V, ID = 20 A - Max rDS on = at VGS = V, ID = A - 100% UIL tested - RoHS Compliant

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.
- Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

DTO-P-2A5K2 TO-252

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 25 ±20 40 69 20 100 84 42
-55 to +175

Units V
mJ W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDD6796

Device FDD6796

Package D-PAK TO-252

Reel Size 13 ’’

Tape Width 12 mm

Quantity 2500 units
2009 Fairchild Semiconductor Corporation

FDD6796 N-Channel MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250 µA, VGS = 0 V

ID = 250 µA, referenced to 25 °C

VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 µA

ID = 250 µA, referenced to 25 °C

VGS = 10 V , ID = 20 A VGS = V, ID = A VGS = 10 V, ID = 20 A, TJ = 150 °C VDS = 5 V, ID = 20 A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 13 V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge

VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6

VGS = 0 V to 10 V VGS = 0 V to V VDD = 13 V,

ID = 20 A

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Datasheet ID: FDD6796 514137