FDD6782A

FDD6782A Datasheet

FDD6782A N-Channel Power MOSFET

Part	Datasheet
FDD6782A	FDD6782A (pdf)

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FDD6782A N-Channel Power MOSFET FDD6782A N-Channel MOSFET January 2009 25 V, Features - Max rDS on = at VGS = 10 V, ID = A - Max rDS on = at VGS = V, ID = A - 100% UIL test - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture DTO-P-2A5K2 TO-252 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 25 ±20 42 20 100 12 31 -55 to +175 Units V mJ W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDD6782A Device FDD6782A Package D-PAK TO-252 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units 2009 Fairchild Semiconductor Corporation FDD6782A N-Channel Power MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = A VGS = V, ID = A VGS = 10 V, ID = A, TJ = 150 °C VDS = 5 V, ID = A mV/°C Dynamic Characteristics

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FDD6782A N-Channel Power MOSFET

FDD6782A

N-Channel MOSFET

January 2009
25 V, Features
- Max rDS on = at VGS = 10 V, ID = A - Max rDS on = at VGS = V, ID = A - 100% UIL test - RoHS Compliant

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.
- Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

DTO-P-2A5K2 TO-252

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 25 ±20 42 20 100 12 31
-55 to +175

Units V
mJ W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDD6782A

Device FDD6782A

Package D-PAK TO-252

Reel Size 13 ’’

Tape Width 12 mm

Quantity 2500 units
2009 Fairchild Semiconductor Corporation

FDD6782A N-Channel Power MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 µA, VGS = 0 V

Breakdown Voltage Temperature Coefficient

ID = 250 µA, referenced to 25 °C
mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V
±100

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 µA

ID = 250 µA, referenced to 25 °C

VGS = 10 V, ID = A VGS = V, ID = A VGS = 10 V, ID = A, TJ = 150 °C VDS = 5 V, ID = A
mV/°C

Dynamic Characteristics

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Datasheet ID: FDD6782A 514136