FDD6676AS

FDD6676AS Datasheet

FDD6676AS

Part	Datasheet
FDD6676AS	FDD6676AS (pdf)

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FDD6676AS FDD6676AS 30V N-Channel SyncFET April 2008 The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter • Low side notebook • 90 A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • Includes SyncFET schottky body diode • Low gate charge 46nC typical • High performance trench technology for extremely low RDS ON • High power and current handling capability • RoHS Compliant S DTO-P-2A5K2 TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD6676AS FDD6676AS 13’’ Ratings 30 ±20 90 100 70 to +150 40 96 Tape width 12mm Units °C/W °C/W °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDD6676AS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 16A Drain-Source Avalanche Current 108 250 mJ Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125°C VGS = ±20 V, VDS = 0 V 30 31 V mV/°C 500 µA ±100 nA On Characteristics Note 2

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FDD6676AS

FDD6676AS
30V N-Channel SyncFET

April 2008

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology.
• DC/DC converter
• Low side notebook
• 90 A, 30 V

RDS ON = VGS = 10 V RDS ON = VGS = V
• Includes SyncFET schottky body diode
• Low gate charge 46nC typical
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• RoHS Compliant

S DTO-P-2A5K2 TO-252

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 3 Note 1a

Note 1

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1 Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDD6676AS

FDD6676AS
13’’

Ratings
30 ±20 90 100 70 to +150
40 96

Tape width 12mm

Units
°C/W °C/W °C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDD6676AS

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 16A

Drain-Source Avalanche Current
108 250 mJ

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C

VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125°C VGS = ±20 V, VDS = 0 V
30 31

V mV/°C
500 µA
±100 nA

On Characteristics Note 2

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Datasheet ID: FDD6676AS 514126