FDD6606

FDD6606 Datasheet

FDD6606

Part	Datasheet
FDD6606	FDD6606 (pdf)

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FDD6606 February 2004 FDD6606 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Motor Drives • 75 A, 30 V RDS ON = 6 VGS = 10 V RDS ON = 8 VGS = V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 75 100 71 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6606 FDD6606 D-PAK TO-252 Reel Size 13’’ Tape width 12mm Units °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDD6606 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS IGSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Leakage VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

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FDD6606

February 2004

FDD6606
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• Motor Drives
• 75 A, 30 V

RDS ON = 6 VGS = 10 V RDS ON = 8 VGS = V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS ON

S DTO-P-2A5K2 TO-252

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 3 Note 1a

Note 1

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Ratings
30 ± 20 75 100 71 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Note 1

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Ambient Note 1b
Package Marking and Ordering Information

Device Marking

Device

Package

FDD6606

FDD6606

D-PAK TO-252

Reel Size 13’’

Tape width 12mm

Units
°C °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDD6606

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

IGSS

Breakdown Voltage VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient

Zero Gate Voltage Drain Current Leakage

VDS = 24 V, VGS = ± 20 V,

VGS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDD6606 514121