FDD3570
FDD3570 Datasheet
FDD3570
| Part | Datasheet |
|---|---|
FDD3570 |
FDD3570 (pdf) |
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| FDD3570 February 2000 PRELIMINARY FDD3570 80V N-Channel MOSFET This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency. • 10 A, 80 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V. • Fast switching speed. • High performance trench technology for extremely low RDS ON • High power and current handling capability. TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous Note 1 Note 1a PD TJ, Tstg Maximum Drain Current Pulsed Maximum Power Dissipation = 25oC TA = 25oC TA = 25oC Note 1 Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD3570 FDD3570 13’’ Ratings 80 ± 20 43 10 110 69 -55 to +150 37 96 Tape width 16mm Units °C/W °C/W °C/W Quantity 2500 Fairchild Semiconductor Corporation FDD3570 Electrical Characteristics Parameter TA = 25°C unless otherwise noted16 Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 64 V, VGS = 0 V IGSSF Leakage Current, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V VDS = 0 V mV/°C On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on |
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