FDD2612
FDD2612 Datasheet
FDD2612
| Part | Datasheet |
|---|---|
FDD2612 |
FDD2612 (pdf) |
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| FDD2612 August 2001 FDD2612 200V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • A, 200 V. RDS ON = 720 VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching speed • Low gate charge 8nC typical S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation Note 1 Note 1a TJ, TSTG Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD2612 FDD2612 13’’ Fairchild Semiconductor Corporation Ratings 200 ± 20 10 42 −55 to +175 40 96 Tape width 16mm Units °C/W °C/W °C/W Quantity 2500 units FDD2612 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse,VDD = 100 V,ID = 1.5A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 160 V, VGS = 20 V, VGS = V , VGS = 0 V VDS = 0 V VDS = 0 V mV/°C 100 nA |
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