FDD2612

FDD2612 Datasheet


FDD2612

Part Datasheet
FDD2612 FDD2612 FDD2612 (pdf)
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FDD2612

August 2001

FDD2612
200V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• A, 200 V. RDS ON = 720 VGS = 10 V
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability
• Fast switching speed
• Low gate charge 8nC typical

S TO-252

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation

Note 1

Note 1a

TJ, TSTG

Note 1b

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1 Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDD2612

FDD2612
13’’

Fairchild Semiconductor Corporation

Ratings
200 ± 20 10 42 −55 to +175
40 96

Tape width 16mm

Units
°C/W °C/W °C/W

Quantity 2500 units

FDD2612

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse,VDD = 100 V,ID = 1.5A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 160 V, VGS = 20 V, VGS = V ,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C
100 nA
More datasheets: 22407 BR005 | 22407 BL005 | 22407 BK005 | 22207 WH005 | 22207 GR001 | 22207 BL001 | 22207 BL005 | 22407 RD005 | SEN0043 | 3RD5V


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Datasheet ID: FDD2612 514111