FDD14AN06LA0
FDD14AN06LA0 Datasheet
FDD14AN06LA0
| Part | Datasheet |
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FDD14AN06LA0 |
FDD14AN06LA0 (pdf) |
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| FDD14AN06LA0 January 2004 FDD14AN06LA0 N-Channel MOSFET 60V, 50A, • rDS ON = Typ. , VGS = 5V, ID = 50A • Qg tot = 25nC Typ. , VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 83557 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE GATE G SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 100oC, VGS = 10V Continuous TC < 80oC, VGS = 5V Continuous Tamb = 25oC, VGS = 5V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 50 Figure 4 55 125 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation FDD14AN06LA0 Package Marking and Ordering Information Device Marking FDD14AN06LA0 Device FDD14AN06LA0 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 50A, VGS = 10V ID = 50A, VGS = 5V ID = 50A, VGS = 5V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 50A Ig = 1.0mA Switching Characteristics VGS = 5V tON td ON tr td OFF tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 50A VGS = 5V, RGS = Drain-Source Diode Characteristics Source to Drain Diode Voltage Notes 1 Starting TJ = 25°C, L = 70uH, IAS = 40A. ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/µs ISD = 50A, dISD/dt = 100A/µs Min Typ Max Units |
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