FDD107AN06LA0

FDD107AN06LA0 Datasheet

FDD107AN06LA0

Part	Datasheet
FDD107AN06LA0	FDD107AN06LA0 (pdf)

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FDD107AN06LA0 January 2004 FDD107AN06LA0 N-Channel MOSFET 60V, 10A, • rDS ON = Typ. , VGS = 5V, ID = 10A • Qg tot = 4.2nC Typ. , VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 83524 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE D GATE SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 100oC, VGS = 5V Continuous TA = 25oC, VGS = 5V, = 52oC/W Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 60 ±20 10 Figure 4 9 25 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation FDD107AN06LA0 Package Marking and Ordering Information Device Marking FDD107AN06LA0 Device FDD107AN06LA0 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 10.9A, VGS = 10V ID = 10A, VGS = 5V ID = 10A, VGS = 5V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 10A Ig = 1.0mA Switching Characteristics VGS = 5V tON td ON tr td OFF tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 10A VGS = 5V, RGS = Drain-Source Diode Characteristics Source to Drain Diode Voltage Notes 1 Starting TJ = 25°C, L = 270µH, IAS = 8A. ISD = 10A ISD = 5A ISD = 10A, dISD/dt = 100A/µs ISD = 10A, dISD/dt = 100A/µs Min Typ Max Units

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FDD107AN06LA0

January 2004

FDD107AN06LA0

N-Channel MOSFET 60V, 10A,
• rDS ON = Typ. , VGS = 5V, ID = 10A
• Qg tot = 4.2nC Typ. , VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101

Formerly developmental type 83524
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems

DRAIN FLANGE D

GATE SOURCE

TO-252AA

FDD SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 100oC, VGS = 5V Continuous TA = 25oC, VGS = 5V, = 52oC/W Pulsed

EAS PD TJ, TSTG

Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature

Ratings 60 ±20
10 Figure 4 9 25 -55 to 175

Units V

A mJ W/oC

Thermal Characteristics

Thermal Resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252

Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2004 Fairchild Semiconductor Corporation

FDD107AN06LA0
Package Marking and Ordering Information

Device Marking FDD107AN06LA0

Device FDD107AN06LA0

Package TO-252AA

Reel Size 330mm

Tape Width 16mm

Quantity 2500 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 50V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 10.9A, VGS = 10V ID = 10A, VGS = 5V ID = 10A, VGS = 5V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 5V VGS = 0V to 1V

VDD = 30V ID = 10A Ig = 1.0mA

Switching Characteristics VGS = 5V
tON td ON tr td OFF tf tOFF

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time

VDD = 30V, ID = 10A VGS = 5V, RGS =

Drain-Source Diode Characteristics

Source to Drain Diode Voltage

Notes 1 Starting TJ = 25°C, L = 270µH, IAS = 8A.

ISD = 10A ISD = 5A ISD = 10A, dISD/dt = 100A/µs ISD = 10A, dISD/dt = 100A/µs

Min Typ Max Units

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Datasheet ID: FDD107AN06LA0 514104