FDD8896

FDD8896 Datasheet

FDD8896 / FDU8896

Part	Datasheet
FDD8896	FDD8896 (pdf)

Related Parts	Information
FDU8896	FDU8896

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FDD8896 / FDU8896 March 2015 FDD8896 / FDU8896 N-Channel MOSFET 30V, 94A, This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. • DC/DC converters • rDS ON = VGS = 10V, ID = 35A • rDS ON = VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS ON • Low gate charge • High power and current handling capability S DTO-P-2A5K2 TO-252 I-PAK TO-251AA MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 2 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 30 ±20 94 85 17 Figure 4 168 80 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W 2008 Fairchild Semiconductor Corporation FDD8896 / FDU8896 Package Marking and Ordering Information Device Marking FDD8896 FDU8896 F Device FDD8896 FDU8896 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics VGS = 10V tON td ON tr td OFF tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 35A VGS = 10V, RGS = Drain-Source Diode Characteristics Source to Drain Diode Voltage Notes 1 Package current limitation is 35A. 2 Starting TJ = 25°C, L = 0.43mH, IAS = 28A, VDD = 27V, VGS = 10V. ISD = 35A ISD = 15A ISD = 35A, dISD/dt = 100A/µs ISD = 35A, dISD/dt = 100A/µs Min Typ Max Units ±100 nA

PDF Datasheet Preview

FDD8896 / FDU8896

March 2015

FDD8896 / FDU8896

N-Channel MOSFET 30V, 94A,

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed.
• DC/DC converters
• rDS ON = VGS = 10V, ID = 35A
• rDS ON = VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS ON
• Low gate charge
• High power and current handling capability

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed

Single Pulse Avalanche Energy Note 2

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Ratings 30 ±20
94 85 17 Figure 4 168 80 -55 to 175
100 52

Units V

A mJ W/oC
oC/W oC/W oC/W
2008 Fairchild Semiconductor Corporation

FDD8896 / FDU8896
Package Marking and Ordering Information

Device Marking FDD8896 FDU8896 F

Device FDD8896 FDU8896

Package TO-252AA TO-251AA

Reel Size 13” Tube

Tape Width 16mm N/A

Quantity 2500 units
75 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS IDSS IGSS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 24V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd

VDS = 15V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VGS = 0V to 1V

VDD = 15V ID = 35A Ig = 1.0mA

Switching Characteristics VGS = 10V
tON td ON tr td OFF tf tOFF

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time

VDD = 15V, ID = 35A VGS = 10V, RGS =

Drain-Source Diode Characteristics

Source to Drain Diode Voltage

Notes 1 Package current limitation is 35A. 2 Starting TJ = 25°C, L = 0.43mH, IAS = 28A, VDD = 27V, VGS = 10V.

ISD = 35A ISD = 15A ISD = 35A, dISD/dt = 100A/µs ISD = 35A, dISD/dt = 100A/µs

Min Typ Max Units
±100 nA

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Datasheet ID: FDD8896 514102