FDD8882
FDD8882 Datasheet
FDD8882 / FDU8882 N-Channel MOSFET
| Part | Datasheet |
|---|---|
FDD8882 |
FDD8882 (pdf) |
| Related Parts | Information |
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FDU8882 |
FDU8882 |
| PDF Datasheet Preview |
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| FDD8882 / FDU8882 N-Channel MOSFET March 2015 FDD8882 / FDU8882 N-Channel MOSFET 30V, 55A, ! rDS ON = VGS = 10V, ID = 35A ! rDS ON = VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS ON ! Low gate charge ! High power and current handling capability - RoHS Complicant Application ! DC/DC converters This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. S DTO-P-2A5K2 TO-252 I-PAK TO-251AA 2008 Fairchild Semiconductor Corporation FDD8882 / FDU8882 N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 2 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 55 50 Figure 4 41 55 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDD8882 FDU8882 F Device FDD8882 FDU8882 Package TO-252AA TO-251AA Reel Size 13” N/A Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Min Typ Max Units ±100 nA FDD8882 / FDU8882 N-Channel MOSFET Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd Switching Characteristics VGS = 10V Turn-On Time td ON tr td OFF tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tOFF Turn-Off Time Drain-Source Diode Characteristics |
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