FDD8878
FDD8878 Datasheet
FDD8878 / FDU8878 N-Channel MOSFET
| Part | Datasheet |
|---|---|
FDD8878 |
FDD8878 (pdf) |
| Related Parts | Information |
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FDU8878 |
FDU8878 |
| PDF Datasheet Preview |
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| FDD8878 / FDU8878 N-Channel MOSFET April 2008 FDD8878 / FDU8878 N-Channel MOSFET 30V, 40A, rDS ON = VGS = 10V, ID = 35A rDS ON = VGS = 4.5V, ID = 35A High performance trench technology for extremely low This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. rDS ON Low gate charge High power and current handling capability Application - DC / DC Converters S D-PAK TO-252 I-PAK TO-251AA 2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 2 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 40 36 11 Figure 4 25 40 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 100 52 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDD8878 FDU8878 F Device FDD8878 FDU8878 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Min Typ Max Units ±100 nA 2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 N-Channel MOSFET Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics VGS = 10V Turn-On Time |
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