FDD8586
FDD8586 Datasheet
FDD8586/FDU8586 N-Channel MOSFET
| Part | Datasheet |
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FDD8586 |
FDD8586 (pdf) |
| Related Parts | Information |
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FDU8586 |
FDU8586 |
| PDF Datasheet Preview |
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| FDD8586/FDU8586 N-Channel MOSFET January 2007 FDD8586/FDU8586 N-Channel MOSFET 20V, 35A, - Max rDS on = at VGS = 10V, ID = 35A - Max rDS on = at VGS = 4.5V, ID = 33A - Low gate charge Qg TOT = 34nC Typ , VGS = 10V - Low gate resistance - 100% Avalanche tested - RoHS compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. Application - Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture I-PAK TO-251AA MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package Limited -Continuous Die Limited -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics Note 1 Note 2 Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information Device Marking FDD8586 FDU8586 Device FDD8586 FDU8586 Package TO-252AA TO-251AA Reel Size 13’’ N/A Tube Ratings 20 ±20 35 93 354 144 77 -55 to 175 Units V mJ W °C °C/W °C/W °C/W Tape Width 12mm N/A Quantity 2500 units 75 units 2007 Fairchild Semiconductor Corporation FDD8586/FDU8586 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C Zero Gate Voltage Drain Current Gate to Source Leakage Current VDS = 16V, VGS = 0V VGS = ±20V TJ = 150°C On Characteristics VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 35A rDS on Drain to Source On Resistance |
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