FDD3706

FDD3706 Datasheet

FDD3706/FDU3706

Part	Datasheet
FDD3706	FDD3706 (pdf)

Related Parts	Information
FDU3706	FDU3706

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FDD3706/FDU3706 March 2015 FDD3706/FDU3706 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package. • DC/DC converter • Motor Drives • 50 A, 20 V RDS ON = 9 VGS = 10 V RDS ON = 11 VGS = V RDS ON = 16 VGS = V • Low gate charge 16 nC • Fast Switching • High performance trench technology for extremely low RDS ON G DTO-P-A25K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 20 ± 12 50 60 44 -55 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Package FDD3706 FDD3706 D-PAK TO-252 FDU3706 FDU3706 I-PAK TO-251 Reel Size 13’’ Tube 45 96 Tape width 16mm N/A Units °C/W °C/W °C/W Quantity 2500 units 2002 Fairchild Semiconductor Corp. FDD3706/FDU3706 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V VGS = 0 V VDS = 0 V VDS = 0 V 20 13 V mV/°C

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FDD3706/FDU3706

March 2015

FDD3706/FDU3706
20V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package.
• DC/DC converter
• Motor Drives
• 50 A, 20 V

RDS ON = 9 VGS = 10 V RDS ON = 11 VGS = V RDS ON = 16 VGS = V
• Low gate charge 16 nC
• Fast Switching
• High performance trench technology for extremely low RDS ON

G DTO-P-A25K2 TO-252

I-PAK TO-251AA

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

TJ, TSTG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Note 3 Note 1a

Pulsed

Note 1a

Power Dissipation

Note 3

Note 1a Note 1b

Operating and Storage Junction Temperature Range

Ratings
20 ± 12 50 60 44 -55 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Note 1

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Ambient Note 1b
Package Marking and Ordering Information

Device Marking

Device

Package

FDD3706

FDD3706

D-PAK TO-252

FDU3706

FDU3706

I-PAK TO-251

Reel Size 13’’ Tube
45 96

Tape width 16mm N/A

Units
°C/W °C/W °C/W

Quantity 2500 units
2002 Fairchild Semiconductor Corp.

FDD3706/FDU3706

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA,Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V

VGS = 0 V VDS = 0 V VDS = 0 V
20 13

V mV/°C

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Datasheet ID: FDD3706 514088