FDD3N40TF
FDD3N40TF Datasheet
FDD3N40 / FDU3N40 400V N-Channel MOSFET
| Part | Datasheet |
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FDD3N40TF |
FDD3N40TF (pdf) |
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| FDD3N40 / FDU3N40 400V N-Channel MOSFET FDD3N40 / FDU3N40 400V N-Channel MOSFET • 2A, 400V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D-PAK FDD Series I-PAK FDU Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. FDD3N40 / FDU3N40 400 ±30 46 2 3 30 -55 to +150 Unit V A V mJ A mJ V/ns W/°C °C Unit Package Marking and Ordering Information Device Marking FDD3N40 FDU3N40 Device FDD3N40TM FDD3N40TF FDU3N40TU Package D-PAK D-PAK I-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 2000 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V VDS = 320V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 1A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 1A Note 4 -- |
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