FDC699P_F077

FDC699P_F077 Datasheet

FDC699P

Part	Datasheet
FDC699P_F077	FDC699P_F077 (pdf)

Related Parts	Information
FDC699P	FDC699P

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FDC699P January 2004 FDC699P P-Channel 2.5V MOSFET This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Battery management • Load Switch • Battery protection • A, V RDS ON = 22 VGS = V RDS ON = 30 VGS = V • High performance trench technology for extremely low RDS ON • Fast switching speed • FLMP SuperSOT-6 package Enhanced thermal performance in industry-standard package size S SuperSOT-6TM FLMP Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDC699P 7’’ Ratings ±12 2 to +150 60 111 Tape width 8mm Fairchild Semiconductor Corporation Units V A W °C °C/W Quantity 3000 units FDC699P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = V, VGS = 0 V mV/°C IGSS Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance

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FDC699P

January 2004

FDC699P

P-Channel 2.5V MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Battery management
• Load Switch
• Battery protection
• A, V RDS ON = 22 VGS = V RDS ON = 30 VGS = V
• High performance trench technology for extremely low RDS ON
• Fast switching speed
• FLMP SuperSOT-6 package Enhanced thermal performance in industry-standard package size

S SuperSOT-6TM FLMP

Bottom Drain

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDC699P
7’’

Ratings
±12
2 to +150
60 111

Tape width 8mm

Fairchild Semiconductor Corporation

Units

V A W °C
°C/W

Quantity 3000 units

FDC699P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = V, VGS = 0 V
mV/°C

IGSS

Leakage

VGS = ±12 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance

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Datasheet ID: FDC699P_F077 514082