FDC655AN

FDC655AN Datasheet

FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET

Part	Datasheet
FDC655AN	FDC655AN (pdf)

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June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V. Fast switching. Low gate charge typical 9 nC . SuperSOTTM-6 package small footprint 72% smaller than SO-8 low profile 1mm thick pin compatible with TSOP-6. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 .55A G D SuperSOT TM -6 pin 1 D Absolute Maximum Ratings TA = 25°C unless otherwise note Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation Note 1a Note 1a Note 1b TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 1998 Fairchild Semiconductor Corporation FDC655AN 30 ±20 -55 to 150 78 30 Units V A °C/W °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS Min Typ Max Units BVDSS

PDF Datasheet Preview

June 1998

FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V.

Fast switching. Low gate charge typical 9 nC .

SuperSOTTM-6 package small footprint 72% smaller than SO-8 low profile 1mm thick pin compatible with TSOP-6.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16
.55A

G D SuperSOT TM -6 pin 1 D

Absolute Maximum Ratings TA = 25°C unless otherwise note Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage - Continuous

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation

Note 1a

Note 1a Note 1b

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
1998 Fairchild Semiconductor Corporation

FDC655AN 30 ±20
-55 to 150
78 30

Units V A
°C/W °C/W

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

Min Typ Max Units

BVDSS

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Datasheet ID: FDC655AN 514079