FDC6432SH
FDC6432SH Datasheet
FDC6432SH
| Part | Datasheet |
|---|---|
FDC6432SH |
FDC6432SH (pdf) |
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| FDC6432SH April 2003 FDC6432SH 12V P-Channel MOSFET, 30V SyncFET This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS ON in a small package. DC/DC converter Power management • SyncFET A, 30V RDS ON = 90 VGS = 10 V RDS ON = 105 VGS = V • P channel A, R RDS ON = 90 VGS = V RDS ON = 125 VGS = V RDS ON = 220 VGS = V • Fast switching speed. • High performance trench technology for extremely low RDS ON D2 S1 SuperSOT TM-6 Pin 1 S2 G1 SuperSOT -6 D1,2 4 D1,2 6 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Continuous Note 1a Pulsed Power Dissipation for Single Operation Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDC6432SH 7’’ Ratings Q1 N 30 ±16 to +150 Units W °C °C/W Tape width 8mm Quantity 3000 units Fairchild Semiconductor Corp. FDC6432SH Electrical CharacteristicsTA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = µA ID = 1 mA, Ref to 25°C ID = µA, Ref to 25°C VDS = 24 V, VGS = 0 V VDS = V, VGS = 0 V VGS = ±16 V, VDS = 0 V VGS = ±8 V, VDS = 0 V On Characteristics VGS th RDS on RDS on |
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