FDC6020C_F077

FDC6020C_F077 Datasheet

FDC6020C

Part	Datasheet
FDC6020C_F077	FDC6020C_F077 (pdf)

Related Parts	Information
FDC6020C	FDC6020C

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FDC6020C November 2003 FDC6020C Complementary MOSFET These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Motor Driving • Q1 A, RDS ON = 55 VGS = V RDS ON = 82 VGS = V • Q2 A, 20V. RDS ON = 27 VGS = V RDS ON = 39 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON . • FLMP SSOT-6 package Enhanced thermal performance in industry-standard package size Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for single Operation Note 1a Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDC6020C 7’’ Fairchild Semiconductor Corporation Bottom Drain Contact Bottom Drain Contact ±12 ±12 to +150 Units °C/W Tape width 8mm Quantity 3000 units FDC6020C Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate-Body Leakage VGS = 0 V, ID = µA VGS = 0 V, ID = 250 µA ID = µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = V, VGS = 0 V VDS = 16 V, VGS = 0 V VGS = +12 V,

PDF Datasheet Preview

FDC6020C

November 2003

FDC6020C

Complementary MOSFET

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• DC/DC converter
• Load switch
• Motor Driving
• Q1 A, RDS ON = 55 VGS = V RDS ON = 82 VGS = V
• Q2 A, 20V. RDS ON = 27 VGS = V RDS ON = 39 VGS = V
• Low gate charge
• High performance trench technology for extremely low RDS ON .
• FLMP SSOT-6 package Enhanced thermal performance in industry-standard package size

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Dual Operation Power Dissipation for single Operation

Note 1a

Note 1a Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDC6020C
7’’

Fairchild Semiconductor Corporation

Bottom Drain Contact

Bottom Drain Contact
±12
±12
to +150

Units
°C/W

Tape width 8mm

Quantity 3000 units

FDC6020C

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Gate-Body Leakage

VGS = 0 V,

ID = µA

VGS = 0 V,

ID = 250 µA

ID = µA, Referenced to 25°C

ID = 250 µA, Referenced to 25°C

VDS = V,

VGS = 0 V

VDS = 16 V,

VGS = 0 V

VGS = +12 V,

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Datasheet ID: FDC6020C_F077 514071