FDB9403-F085
FDB9403-F085 Datasheet
FDB9403_F085 N-Channel Power MOSFET
| Part | Datasheet |
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FDB9403-F085 |
FDB9403-F085 (pdf) |
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| FDB9403_F085 N-Channel Power MOSFET FDB9403_F085 N-Channel Power MOSFET 40V, 110A, 1.2mΩ - Typ rDS on = 1mΩ at VGS = 10V, ID = 80A - Typ Qg tot = 164nC at VGS = 10V, ID = 80A - UIS Capability - RoHS Compliant - Qualified to AEC Q101 - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter/alternator - Distributed Power Architectures and VRM - Primary Switch for 12V Systems TO-263AB FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous VGS=10 Note 1 Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C Note 2 Note 3 Aug 2012 Ratings 40 ±20 110 See Figure4 968 333 -55 to + 175 43 Units V mJ W/oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB9403 FDB9403_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Current is limited by bondwire configuration. Please see Fairchild AN 9757-1 for details on test method. 2 Starting TJ = 25°C, L = 0.47mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3 is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface presented here is hile determined user's board design. The maximum rating 2012 Fairchild Semiconductor Corporation FDB9403_F085 N-Channel Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS = 40V, TJ = 25oC VGS = 0V TJ = 175oC Note 4 VGS = ±20V ±100 nA VGS th rDS on Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Characteristics |
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