FDB8878
FDB8878 Datasheet
FDB8878 N-Channel MOSFET
| Part | Datasheet |
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FDB8878 |
FDB8878 (pdf) |
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| FDB8878 N-Channel MOSFET November 2005 FDB8878 N-Channel Logic Level MOSFET 30V, 48A, General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. - rDS ON = VGS = 10V, ID = 40A - rDS ON = VGS = 4.5V, ID = 36A - High performance trench technology for extremely low rDS ON - Low gate charge - High power and current handling capability - RoHS Compliant GATE SOURCE TO-263AB FDB SERIES DRAIN FLANGE MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 4.5V Pulsed Note 4 PD TJ, TSTG Single Pulse Avalanche Energy Note 1 Power dissipation Operating and Storage Temperature L = 1mH, IAS = 11A L = 0.03mH,IAS = 38A Ratings 30 ±20 48 42 170 60 21 -55 to 175 Units V Thermal Characteristics Thermal Resistance, Junction to Case Note 2 Thermal Resistance, Junction to Ambient at 1000 seconds Note 3 oC/W oC/W Package Marking and Ordering Information Device Marking FDB8878 Device FDB8878 Package TO-263 Reel Size 13” Tape Width 24mm Quantity 800 units 2005 Fairchild Semiconductor Corporation FDB8878 N-Channel MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temp. Coefficient ID = 250µA, Referenced to 25oC Zero Gate Voltage Drain Current Gate to Source Leakage Current VDS = 24V VGS = 0V VGS = ±20V TA = 150oC - mV/oC ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, Referenced to 25oC ID = 40A, VGS = 10V ID = 36A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC mV/oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VDD = 15V VGS = 0V to 5V ID = 40A |
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