FDB8860-F085
FDB8860-F085 Datasheet
FDB8860_F085 N-Channel Logic Level MOSFET
| Part | Datasheet |
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FDB8860-F085 |
FDB8860-F085 (pdf) |
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| FDB8860_F085 N-Channel Logic Level MOSFET June 2010 FDB8860_F085 N-Channel Logic Level MOSFET 30V, 80A, 2.6m: - RDS ON = 1.9m Typ , VGS = 5V, ID = 80A - Qg 5 = 89nC Typ , VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - 12V Automotive Load Control - Start / Alternator Systems - Electronic Power Steering Systems - ABS - DC-DC Converters 2010 Fairchild Semiconductor Corporation FDB8860_F085 N-Channel Logic Level MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous VGS = 10V, TC < 163oC Continuous VGS = 5V, TC < 162oC Continuous VGS = 10V, TC = 25oC, with RTJA = 43oC/W Pulsed SinglePulseAvalancheEnergy Note1 Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 80 31 Figure 4 947 254 -55 to +175 Units V A mJ W/oC Thermal Characteristics RTJC RTJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note 2 Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 62 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB8860 FDB8860_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 1mA, VGS = 0V VDS = 24V VGS = 0V TJ = 150°C - VGS = r20V On Characteristics VGS th Gate to Source Threshold Voltage VDS = VGS, ID = 250PA ID = 80A, VGS = 10V ID = 80A, VGS = 5V RDS ON Drain to Source On Resistance ID = 80A, VGS = 4.5V ID = 80A, VGS = 10V, TJ = 175°C Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 80A Ig = 1.0mA |
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