FDB8444TS
FDB8444TS Datasheet
FDB8444TS N-Channel MOSFET with Temperature Sensor
| Part | Datasheet |
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FDB8444TS |
FDB8444TS (pdf) |
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| FDB8444TS N-Channel MOSFET with Temperature Sensor August 2007 FDB8444TS N-Channel MOSFET with Temperature Sensor 40V, 70A, 5mΩ - Typ rDS on = 3.8mΩ at VGS = 10V, ID = 70A - Typ Qg TOT = 130nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Transmission - Distributed Power Architecture and VRMs - Primary Switch for 12V Systems TO263 5 LEADS 2007 Fairchild Semiconductor Corporation FDB8444TS N-Channel MOSFET with Temperature Sensor MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 140oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, with = 43oC/W Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Note 1 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Ratings 40 ±20 70 20 See Figure 4 439 181 -55 to +175 Units V mJ W/oC oC/W oC/W Package Marking and Ordering Information Device Marking FDB8444TS Device FDB8444TS Package TO-263 5LDS Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V ±100 nA VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 70A, VGS= 10V ID = 70A, VGS= 10V, TJ = 175oC Ciss Coss Crss RG Qg TOT Qg 10 Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 70A 8410 260 338 nC 130 169 nC FDB8444TS N-Channel MOSFET with Temperature Sensor Electrical Characteristics TC = 25oC unless otherwise noted Parameter Switching Characteristics Test Conditions ton td on tr td off tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time |
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