FDB8132_F085

FDB8132_F085 Datasheet

FDB8132_F085 N-Channel MOSFET

Part	Datasheet
FDB8132_F085	FDB8132_F085 (pdf)

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FDB8132_F085 N-Channel MOSFET FDB8132_F085 N-Channel MOSFET 30 V, 110 A, mΩ October 2014 - Typ RDS on = 1.4mΩ at VGS = 10V, ID = 80A - Typ Qg tot = 244nC at VGS = 10V, ID = 80A - UIS Capability - RoHS Compliant - Qualified to AEC Q101 - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12V Systems TO-263 FDB SERIES For current package drawing, please refer to the Fairchild website at ings/TO/TO263A02.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Parameter VDSS VGS Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous VGS=10 Note 1 Pulsed Drain Current Single-Pulse Avalanche Energy Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C Note 2 Note 3 Ratings 30 ±20 110 See Figure 4 1434 333 -55 to + 175 43 Units V mJ W/oC/W oC/W Package Marking and Ordering Information Device Marking FDB8132 Device FDB8132_F085 Package D2-PAK TO-263 Reel Size 330mm Tape Width 24mm Quantity 800 units 1 Current is limited by bondwire configuration. 2 Starting TJ = 25°C, L = 0.7mH, IAS = 64A, VDD = 20V during inductor charging and VDD = 0V during time in avalanche. 3 is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. sented here is based on mounting while determined board design. The maximum rating pre- 2014 Fairchild Semiconductor Corporation FDB8132_F085 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. Parameter Off Characteristics Test Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS = 30V, TJ = 25oC VGS = 0V TJ = 175oC Note 4 VGS = ±20V ±100 nA VGS th rDS on Gate-to-Source Threshold Voltage Drain-to-Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 80A, TJ = 25oC

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FDB8132_F085 N-Channel MOSFET

FDB8132_F085

N-Channel MOSFET
30 V, 110 A, mΩ

October 2014
- Typ RDS on = 1.4mΩ at VGS = 10V, ID = 80A - Typ Qg tot = 244nC at VGS = 10V, ID = 80A - UIS Capability - RoHS Compliant - Qualified to AEC Q101
- Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12V Systems

TO-263

FDB SERIES

For current package drawing, please refer to the Fairchild website at ings/TO/TO263A02.pdf

MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.

Parameter

VDSS VGS

Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous VGS=10 Note 1 Pulsed Drain Current

Single-Pulse Avalanche Energy

Power Dissipation

Derate Above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Resistance, Junction to Case

Maximum Thermal Resistance, Junction to Ambient

TC = 25°C TC = 25°C

Note 2

Note 3

Ratings 30 ±20 110

See Figure 4 1434 333
-55 to + 175 43

Units V
mJ W/oC/W oC/W
Package Marking and Ordering Information

Device Marking FDB8132

Device FDB8132_F085

Package D2-PAK TO-263

Reel Size 330mm

Tape Width 24mm

Quantity 800 units
1 Current is limited by bondwire configuration.
2 Starting TJ = 25°C, L = 0.7mH, IAS = 64A, VDD = 20V during inductor charging and VDD = 0V during time in avalanche.
3 is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. sented here is based on mounting
while
determined
board
design.

The maximum rating pre-
2014 Fairchild Semiconductor Corporation

FDB8132_F085 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted.

Parameter

Off Characteristics

Test Conditions

Min. Typ. Max. Units

BVDSS Drain-to-Source Breakdown Voltage

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Leakage Current

On Characteristics

ID = 250uA, VGS = 0V

VDS = 30V, TJ = 25oC

VGS = 0V

TJ = 175oC Note 4

VGS = ±20V
±100 nA

VGS th rDS on

Gate-to-Source Threshold Voltage Drain-to-Source On Resistance

Dynamic Characteristics

VGS = VDS, ID = 250uA

ID = 80A,

TJ = 25oC

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Datasheet ID: FDB8132_F085 514057