FDP6030L

FDP6030L Datasheet

FDP6030L/FDB6030L

Part	Datasheet
FDP6030L	FDP6030L (pdf)

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FDP6030L/FDB6030L August 2003 FDP6030L/FDB6030L N-Channel Logic Level MOSFET This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS ON and fast switching speed. • 48 A, 30 V RDS ON = 13 VGS = 10 V RDS ON = 17 VGS = V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS ON • 175°C maximum junction temperature rating TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed Total Power Dissipation TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB6030L FDB6030L 13’’ FDP6030L FDP6030L Tube Ratings 30 ± 20 48 150 52 to +175 Tape width 24mm n/a Units W/°C °C/W Quantity 800 units 2003 Fairchild Semiconductor Corporation FDP6030L/FDB6030L Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 1 Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 26 A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ± 20 V, VDS = 0 V

PDF Datasheet Preview

FDP6030L/FDB6030L

August 2003

FDP6030L/FDB6030L

N-Channel Logic Level MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS ON and fast switching speed.
• 48 A, 30 V

RDS ON = 13 VGS = 10 V RDS ON = 17 VGS = V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low RDS ON
• 175°C maximum junction temperature rating

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

Total Power Dissipation TC = 25°C Derate above 25°C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB6030L

FDB6030L
13’’

FDP6030L

FDP6030L

Tube

Ratings
30 ± 20 48 150 52 to +175

Tape width 24mm n/a

Units

W/°C
°C/W

Quantity 800 units
2003 Fairchild Semiconductor Corporation

FDP6030L/FDB6030L

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 1

Single Pulse Drain-Source

Avalanche Energy

VDD = 15 V, ID = 26 A

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ± 20 V, VDS = 0 V

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Datasheet ID: FDP6030L 514052