FDP2570/FDB2570
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FDB2570 (pdf) |
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FDP2570 |
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FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel MOSFET This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • 22 A, 150 V. RDS ON = 80 VGS = 10 V RDS ON = 90 VGS = 6 V • Low gate charge 40nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • 175°C maximum junction temperature rating TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed Note 1 Total Power Dissipation TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB2570 FDB2570 13’’ FDP2570 FDP2570 Tube Ratings 150 ± 20 22 50 93 to +175 Tape width 24mm n/a Units V A W°/C °C °C/W °C/W Quantity 800 units 45 units Fairchild Semiconductor Corporation FDP2570/FDB2570 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 1 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 75 V, ID = 11 A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 0 V IGSSF Leakage, Forward |
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