FDB2570

FDB2570 Datasheet


FDP2570/FDB2570

Part Datasheet
FDB2570 FDB2570 FDB2570 (pdf)
Related Parts Information
FDP2570 FDP2570 FDP2570
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FDP2570/FDB2570

August 2001

FDP2570/FDB2570
150V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• 22 A, 150 V. RDS ON = 80 VGS = 10 V RDS ON = 90 VGS = 6 V
• Low gate charge 40nC typical
• Fast switching speed
• High performance trench technology for extremely
low RDS ON
• 175°C maximum junction temperature rating

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

Note 1

Total Power Dissipation TC = 25°C

Derate above 25°C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB2570

FDB2570
13’’

FDP2570

FDP2570

Tube

Ratings
150 ± 20 22 50 93 to +175

Tape width 24mm n/a

Units

V A W°/C °C
°C/W °C/W

Quantity 800 units 45 units

Fairchild Semiconductor Corporation

FDP2570/FDB2570

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 1

WDSS

Single Pulse Drain-Source Avalanche Energy

VDD = 75 V,

ID = 11 A

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 120 V, VGS = 0 V

IGSSF

Leakage, Forward
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Datasheet ID: FDB2570 514044