FDB24AN06LA0
FDB24AN06LA0 Datasheet
FDB24AN06LA0 / FDP24AN06LA0
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FDB24AN06LA0 |
FDB24AN06LA0 (pdf) |
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FDP24AN06LA0 |
FDP24AN06LA0 |
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| FDB24AN06LA0 / FDP24AN06LA0 January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel MOSFET 60V, 36A, • rDS ON = Typ. , VGS = 5V, ID = 36A • Qg tot = 16nC Typ. , VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 83547 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems GATE DRAIN FLANGE SOURCE TO-263AB FDB SERIES DRAIN FLANGE SOURCE DRAIN GATE TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 100oC, VGS = 5V Continuous TA = 25oC, VGS = 5V, = 43oC/W Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 60 ±20 40 36 25 Figure 4 36 75 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation FDB24AN06LA0 / FDP24AN06LA0 Package Marking and Ordering Information Device Marking FDB24AN06LA0 FDP24AN06LA0 Device FDB24AN06LA0 FDP24AN06LA0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 40A, VGS = 10V ID = 36A, VGS = 5V ID = 36A, VGS = 5V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 36A Ig = 1.0mA Switching Characteristics VGS = 5V tON td ON Turn-On Time Turn-On Delay Time tr td OFF Rise Time Turn-Off Delay Time tf tOFF Fall Time Turn-Off Time VDD = 30V, ID = 36A VGS = 5V, RGS = Drain-Source Diode Characteristics |
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