FDP14AN06LA0
FDP14AN06LA0 Datasheet
FDB14AN06LA0 / FDP14AN06LA0
| Part | Datasheet |
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FDP14AN06LA0 |
FDP14AN06LA0 (pdf) |
| Related Parts | Information |
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FDB14AN06LA0 |
FDB14AN06LA0 |
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| FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel MOSFET 60V, 60A, • rDS ON = Typ. , VGS = 5V, ID = 60A • Qg tot = 24nC Typ. , VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 83557 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE TO-220AB FDP SERIES SOURCE DRAIN GATE GATE SOURCE TO-263AB FDB SERIES DRAIN FLANGE MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TA = 25oC, VGS = 5V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Ratings 60 ±20 67 60 10 Figure 4 46 125 -55 to 175 62 43 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation FDB14AN06LA0 / FDP14AN06LA0 Package Marking and Ordering Information Device Marking FDB14AN06LA0 FDP14AN06LA0 Device FDB14AN06LA0 FDP14AN06LA0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 67A, VGS = 10V ID = 60A, VGS = 5V ID = 60A, VGS = 5V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 60A Ig = 1.0mA Switching Characteristics VGS = 5V tON td ON Turn-On Time Turn-On Delay Time tr td OFF Rise Time Turn-Off Delay Time tf tOFF Fall Time Turn-Off Time VDD = 30V, ID = 60A VGS = 5V, RGS = Drain-Source Diode Characteristics |
| More datasheets: E53-00R | E51-50R | E51-60E | E51-60B | E51-50E | E51-50B | E51-00R | E51-00E | E51-00B | 2171 |
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