FDB20AN06A0
FDB20AN06A0 Datasheet
FDB20AN06A0 / FDP20AN06A0
| Part | Datasheet |
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FDB20AN06A0 |
FDB20AN06A0 (pdf) |
| Related Parts | Information |
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FDP20AN06A0 |
FDP20AN06A0 |
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| FDB20AN06A0 / FDP20AN06A0 June 2003 FDB20AN06A0 / FDP20AN06A0 N-Channel MOSFET 60V, 45A, • rDS ON = Typ. , VGS = 10V, ID = 45A • Qg tot = 15nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 82547 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE TO-220AB FDP SERIES SOURCE DRAIN GATE GATE SOURCE TO-263AB FDB SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature DRAIN FLANGE Ratings 60 ±20 45 32 9 Figure 4 50 90 -55 to 175 Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 62 43 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2003 Fairchild Semiconductor Corporation FDB20AN06A0 / FDP20AN06A0 Package Marking and Ordering Information Device Marking FDB20AN06A0 FDP20AN06A0 Device FDB20AN06A0 FDP20AN06A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 45A, VGS = 10V ID = 45A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 45A Ig = 1.0mA Switching Characteristics VGS = 10V tON td ON tr td OFF tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 45A VGS = 10V, RGS = Drain-Source Diode Characteristics Source to Drain Diode Voltage 1 Starting TJ = 25°C, L = 80µH, IAS = 36A. 2 Pulse width = 100s. ISD = 45A ISD = 22A ISD = 45A, dISD/dt = 100A/µs ISD = 45A, dISD/dt = 100A/µs |
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