FDAF69N25
FDAF69N25 Datasheet
FDAF69N25 250V N-Channel MOSFET
| Part | Datasheet |
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FDAF69N25 |
FDAF69N25 (pdf) |
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| FDAF69N25 250V N-Channel MOSFET FDAF69N25 250V N-Channel MOSFET • 34A, 250V, RDS on = = 10 V • Low gate charge typical 77 nC • Low Crss typical 84 pF • Fast switching • Improved dv/dt capability September 2005 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies. TO-3PF FQAF Series Absolute Maximum Ratings VDSS VDS Avalanche IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Note 2 Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDAF69N25 250 300 34 136 ±30 1894 34 115 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. Package Marking and Ordering Information Device Marking FDAF69N25 Device FDAF69N25 Package TO-3PF Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 17A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 17A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, |
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