FDA75N28
FDA75N28 Datasheet
FDA75N28 280V N-Channel MOSFET
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FDA75N28 |
FDA75N28 (pdf) |
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| FDA75N28 280V N-Channel MOSFET FDA75N28 280V N-Channel MOSFET • 75A, 280V, RDS on = = 10 V • Low gate charge typical 111 nC • Low Crss typical 90 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability October 2006 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PN FQA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient 2006 Fairchild Semiconductor Corporation ● ● FDA75N28 280 75 45 300 ± 30 3080 75 52 520 -55 to +150 Package Marking and Ordering Information Device Marking FDA75N28 Device FDA75N28 Package TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 37.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 37.5A Note 4 -- Ciss Input Capacitance Coss Output Capacitance |
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