FDD068AN03L

FDD068AN03L Datasheet

FDD068AN03L / FDU068AN03L

Part	Datasheet
FDD068AN03L	FDD068AN03L (pdf)

Related Parts	Information
FDU068AN03L	FDU068AN03L

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FDD068AN03L / FDU068AN03L December 2003 FDD068AN03L / FDU068AN03L N-Channel MOSFET 30V, 35A, • rDS ON = Typ. , VGS = 4.5V, ID = 35A • Qg 5 = 24nC Typ. , VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 • 12V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • ABS • DC-DC Converters S DTO-P-2A5K2 TO-252 I-PAK TO-251AA MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 154oC, VGS = 10V Continuous TC < 150oC, VGS = 4.5V Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 30 ±20 35 17 Figure 4 168 80 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2003 Fairchild Semiconductor Corporation FDD068AN03L / FDU068AN03L Package Marking and Ordering Information Device Marking FDD068AN03L FDU068AN03L Device FDD068AN03L FDU068AN03L Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics VGS = 4.5V tON td ON tr td OFF tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 35A VGS = 4.5V, RGS = Drain-Source Diode Characteristics Source to Drain Diode Voltage

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FDD068AN03L / FDU068AN03L

December 2003

FDD068AN03L / FDU068AN03L

N-Channel MOSFET 30V, 35A,
• rDS ON = Typ. , VGS = 4.5V, ID = 35A
• Qg 5 = 24nC Typ. , VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101
• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC < 154oC, VGS = 10V Continuous TC < 150oC, VGS = 4.5V Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Ratings 30 ±20
35 17 Figure 4 168 80 -55 to 175
100 52

Units V

A mJ W/oC
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2003 Fairchild Semiconductor Corporation

FDD068AN03L / FDU068AN03L
Package Marking and Ordering Information

Device Marking FDD068AN03L FDU068AN03L

Device FDD068AN03L FDU068AN03L

Package TO-252AA TO-251AA

Reel Size 13” Tube

Tape Width 12mm N/A

Quantity 2500 units
75 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 25V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd

VDS = 15V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VGS = 0V to 1V

VDD = 15V ID = 35A Ig = 1.0mA

Switching Characteristics VGS = 4.5V
tON td ON tr td OFF tf tOFF

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time

VDD = 15V, ID = 35A VGS = 4.5V, RGS =

Drain-Source Diode Characteristics

Source to Drain Diode Voltage

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Datasheet ID: FDD068AN03L 514023