FCPF11N65
FCPF11N65 Datasheet
FCPF11N65 N-Channel MOSFET
| Part | Datasheet |
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FCPF11N65 |
FCPF11N65 (pdf) |
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| FCPF11N65 N-Channel MOSFET February 2015 FCPF11N65 N-Channel MOSFET 650 V, 11 A, 380 mΩ • Typ. RDS on = 320 mΩ • Ultra Low Gate Charge Typ. Qg = 40 nC • Low Effective Output Capacitance Typ. Coss eff. = 95 pF • 100% Avalanche Tested MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. TO-220F Absolute Maximum Ratings Parameter VDSS ID Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25°C - Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Note 1 Note 2 Note 1 Note 1 Note 3 2005 Fairchild Semiconductor Corporation FCPF11N65 650 11* 7* 33 ± 30 340 11 36 -55 to +150 300 FCPF11N65 Unit V A V mJ A mJ V/ns W/°C °C °C Unit °C/W °C/W FCPF11N65 N-Channel MOSFET Package Marking and Ordering Information Part Number FCPF11N65 Top Mark FCPF11N65 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage / BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 250 uA, TJ = 25°C VGS = 0 V, ID = 250 uA, TJ = 150°C ID = 250 uA, Referenced to 25°C VGS = 0 V, ID = 11 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 uA VGS = 10 V, ID = A Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = A Ciss Input Capacitance Coss Output Capacitance Crss Coss Output Capacitance Coss eff. Effective Output Capacitance Switching Characteristics VDS = 25 V, VGS = 0 V, f = MHz |
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